 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Switching Diode BAS16 Silicon epitaxial planar type Formosa MS SOT-23 0.040 (1.02) 0.035 (0.88) Features Low power loss, high efficiency 0.017 (0.42) (C) R 0.05 (0.002) 0.118 (3.00) 0.110 (2.80) .079(2.00) .071(1.80) High speed ( trr < 4 ns ) (B) (A) 0.055 (1.40) 0.028 (0.70) 0.020 (0.50) 0.102 (2.60) 0.094 (2.40) Mechanical data Case : Glass, SOT-23 0.047 (1.20) 0.045 (1.15) Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any 0.033 (0.85) Dimensionsininchesand(millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Non-Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward voltage Forward current Average forward current Power dissipation Junction temperature Storage temperature VR = 0 tp = 1 us CONDITIONS Symbol VRM VR IFSM IFRM IF IFAV PV Tj TSTG -55 MIN. TYP. MAX. 100 75 2.0 500 300 200 350 125 +125 UNIT V V A mA mA mA mW o o 0.015 (0.38) High reliability C C ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted) PARAMETER Forward voltage Reverse current Breakdown current Diode capacitance Rectification efficiency Reverse recovery time IF = 5mA IF = 10mA VR = 75V IR = 100uA , TP /T = 0.01 TP = 0.3ms VR = 0 , f = 1MHz , VHF = 50mV VHF = 2V , f = 100MHz IF =10mA, VR =6V, IRR = 0.1 X IR , RL =100OHM CONDITIONS Symbol VF VF IR V(BR) CD nR trr 45 6 100 2.0 MIN. 0.62 0.86 TYP. MAX. 0.72 1.00 5.0 UNIT V V uA V pF % ns RATING AND CHARACTERISTIC CURVES (BAS16) FIG.1-TYPICAL FORWARD CHARACTERISTICS 1000 FIG.3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT,(mA) Tj=25 C 100 REVERSE CURRENT, (nA) 1000 Tj=25 C Pulse Width 300us 1% Duty Cycle Scattering Limit 10 100 Scattering Limit 1.0 10 0.1 0 .4 .8 1.2 1.6 2.0 FORWARD VOLT AGE,(V) 1 1 10 REVERSE VOLTAGE 100 FIG.2 - TYPICAL DIODE CAPACITANCE 3.5 10 3.0 3 FIG.4 - REVERSE CURRENT VS JUNCTION TEMPERATURE DIODE CAPACITANCE,(pF) REVERSE CURRENT, (uA) 2.5 2.0 1.5 1.0 0.5 0 10 2 =75 VR 10 V AX /M .V U AL ES 1 VR =7 5V /T U AL .V YP ES 0.1 1 10 100 1000 10 -1 REVERSE VOLTAGE,(V) 10 -2 0 100 200 o JUNCTION TEMPERATURE ( C) |
Price & Availability of BAS16
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |